smd type ic smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1. gate 2. drain 3. source features r ds(on) = 45m (typ.), v gs = 10v, i d =9a q g(tot) = 26nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single pulse and repetitive pulse) qualified to aec q101 absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 150 v gate to source voltage v gs 20 v drain current continuous (t c =25 ,v gs = 10v) 29 a drain current continuous (t c = 100 ,v gs = 10v) 20 a drain current continuous(t c =100 ,v gs =10v,r ja =52 /w)) 4a single pulse avalanche energy * e as 36 mj power dissipation p d 135 w derate above 25 p d 0.9 w/ operating and storage temperature t j ,t stg -55to175 thermal resistance junction to case r jc 1.11 /w thermal resistance junction to ambient to252 r ja 100 /w thermal resistance junction to ambient to252 ,1in 2 copper pad area r ja 52 /w *startingt j =25 ,l=0.2mh,i as = 19a. i d 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors KDD2572 smd type ic smd type smd type smd type smd type ic smd type product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage b vdss i d = 250 a, v gs =0v 150 v v ds = 120v,v gs =0v 1 v ds = 120v,v gs =0v,t c = 150 250 gate to source leakage current i gss v gs = 20v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 24v i d =9a,v gs = 10v 0.045 0.054 i d =4a,v gs = 6v, 0.05 0.075 i d =9a,v gs = 10v,t c = 175 0.126 0.146 input capacitance c iss 1770 pf output capacitance c oss 183 pf reverse transfer capacitance c rss 40 pf total gate charge at 10v q g(tot) v gs =0v to 10v,v dd =75v,i d =9a,i g =1.0ma 26 34 nc threshold gate charge q g(th) v gs =0v to 2v,v dd =75v,i d =9a,i g =1.0ma 3.3 4.3 nc gate to source gate charge q gs 8nc gate charge threshold to plateau q gs2 5nc gate to drain "miller" charge q gd 6nc turn-on time t on 36 ns turn-on delay time t d(on) 11 ns rise time t r 14 ns turn-off delay time t d(off) 31 ns fall time t f 14 ns turn-off time t off 66 ns i sd =9a 1.25 v i sd =4a 1.0 v reverse recovery time t rr i sd =9a,d isd /d t = 100a/ s 74 ns reverse recovery charge q rr i sd =9a,d isd /d t = 100a/ s 169 nc i dss zero gate voltage drain current a source to drain diode voltage v sd v ds = 25v, v gs =0v,f=1mhz drain to source on-resistance r ds(on) v dd = 75v,i d =9a,i g =1.0ma v dd = 75v, i d = 33a,v gs = 10v, r gs =11 KDD2572 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type smd type smd type smd type ic smd type product specification
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